B. Govorkov : rechercher sur Z-Library

Le plus grand référentiel d'articles scientifiques au monde. 70,000,000+ d'articles gratuitement.

Don't use scam websites

Livres
Articles (353)
Les plus populaires
Liste
- Liste
- Tableau

1

The geometry of fractures caused by cleavage of α-Al2O3 single crystals

Prof. Dr. H. S. Bagdasarov, Dozent Dr. G. V. Berezhkova, Dozent Dr. V. G. Govorkov, E. P. Kozlovskaya, E. A. Fedorov, Dozent Dr. M. A. Chernysheva

Journal:

Crystal Research and Technology

Année:

1973

Langue:

english

Fichier:

PDF, 272 KB

english, 1973

2

Electrical Properties of Diamond Platinum Vertical Schottky Barrier Diodes

Polyakov, Alexander, Smirnov, Nikolay, Tarelkin, Sergey, Govorkov, Anatoliy, Bormashov, Vitaly, Kuznetsov, Mikhail, Teteruk, Dmitry, Buga, Sergey, Kornilov, Nikolay, Lee, In-Hwan

Journal:

Materials Today: Proceedings

Année:

2016

Langue:

english

Fichier:

PDF, 184 KB

english, 2016

3

Can the Pauli principle be deduced with local quantum field theory?

Journal:

Physics Letters A

Année:

1989

Langue:

english

Fichier:

PDF, 282 KB

english, 1989

4

Electrical properties and deep traps spectra in AlGaN films with nitrogen and gallium polarities prepared by molecular beam epitaxy

D.Yu. Protasov, O.E. Tereshchenko, K.S. Zhuravlev, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 237 KB

english, 2009

5

Investigation of indium segregation in InGaAs/(Al)GaAs quantum wells grown by MOCVD

A.A. Marmalyuk, O.I. Govorkov, A.V. Petrovsky, D.B. Nikitin, A.A. Padalitsa, P.V. Bulaev, I.V. Budkin, I.D. Zalevsky

Journal:

Journal of Crystal Growth

Année:

2002

Langue:

english

Fichier:

PDF, 109 KB

english, 2002

6

Deep levels studies of AlGaN/GaN superlattices

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, M.G. Mil’vidskii, S.J. Pearton, A.S. Usikov, N.M. Shmidt, A.V. Osinsky, W.V. Lundin, E.E. Zavarin, A.I. Besulkin

Journal:

Solid-State Electronics

Année:

2003

Langue:

english

Fichier:

PDF, 229 KB

english, 2003

7

The effect of Gd doping on carrier concentration in InGaAsSb layers grown by liquid phase epitaxy

L.M. Dolginov, I.V. Tunitskaya, A.Y. Polyakov, L.V. Druzhinina, G.V. Vinogradova, N.B. Smirnov, A.V. Govorkov, O.M. Borodina, E.A. Kozhukhova, A.A. Balmashnov, A.G. Milnes

Journal:

Thin Solid Films

Année:

1994

Langue:

english

Fichier:

PDF, 329 KB

english, 1994

8

Parastatistics and gauge symmetries

Journal:

Theoretical and Mathematical Physics

Année:

1982

Langue:

english

Fichier:

PDF, 793 KB

english, 1982

9

Statistical reactor kinetics equations

Journal:

Année:

1964

Langue:

english

Fichier:

PDF, 335 KB

english, 1964

10

New local formulation of parastatistics and gauge symmetry

Journal:

Nuclear Physics B

Année:

1991

Langue:

english

Fichier:

PDF, 1.09 MB

english, 1991

11

Modular, Multi-Function Digital-RF Receiver Systems

Gupta, Deepnarayan, Kirichenko, Dmitri E., Dotsenko, Vladimir V., Miller, Robert, Sarwana, Saad, Talalaevskii, Andrei, Delmas, Jean, Webber, Robert J, Govorkov, Sergei, Kirichenko, Alexander F., Verni

Journal:

IEEE Transactions on Appiled Superconductivity

Année:

2011

Langue:

english

Fichier:

PDF, 1.51 MB

english, 2011

12

Characteristics of a-GaN films and a-AlGaN/GaN heterojunctions prepared on r-sapphire by two-stage growth process

Polyakov, A. Y., Jang, Lee-Woon, Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Yugova, T. G., Reznik, V. Y., Pearton, S. J., Baik, Kwang Hyeon, Hwang, Sung-Min, Jung, Sukkoo, Lee, In-Hwan

Journal:

Journal of Applied Physics

Année:

2011

Langue:

english

Fichier:

PDF, 831 KB

english, 2011

13

Deep traps and thermal measurements on AlGaN/GaN on Si transistors

Lo, C. F., Ren, Fan, Pearton, S. J., Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Belogorokhov, I. A., Belogorokhov, A. I., Reznik, V. Y., Johnson, J. W.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2011

Langue:

english

Fichier:

PDF, 562 KB

english, 2011

14

[IEEE 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Cannizzaro, Catania, Italy (2007.10.2-2007.10.5)] 2007 15th International Conference on Advanced Thermal Processing of Semiconductors - Lasers Solutions for Annealing

Turk, Brandon, Paetzel, Rainer, Brune, Jan, Govorkov, Sergei, Simon, Frank

Année:

2007

Langue:

english

Fichier:

PDF, 4.58 MB

english, 2007

15

A new method for measuring thermal conductivity of thin films

Govorkov, S., Ruderman, W., Horn, M. W., Goodman, R. B., Rothschild, M.

Journal:

Review of Scientific Instruments

Année:

1997

Langue:

english

Fichier:

PDF, 384 KB

english, 1997

16

Electrical and optical properties of Cr and Fe implanted n-GaN

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Pashkova, N. V., Shlensky, A. A., Pearton, S. J., Overberg, M. E., Abernathy, C. R., Zavada, J. M., Wilson, R. G.

Journal:

Journal of Applied Physics

Année:

2003

Langue:

english

Fichier:

PDF, 341 KB

english, 2003

17

Neutron irradiation effects on electrical properties and deep-level spectra in undoped n-AlGaN∕GaN heterostructures

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Pearton, S. J., Kolin, N. G., Merkurisov, D. I., Boiko, V. M.

Journal:

Journal of Applied Physics

Année:

2005

Langue:

english

Fichier:

PDF, 336 KB

english, 2005

18

Transient gratings and second-harmonic probing of the phase transformation of a GaAs surface under femtosecond laser irradiation

Govorkov, S. V., Schröder, Th., Shumay, I. L., Heist, P.

Journal:

Physical Review B

Année:

1992

Langue:

english

Fichier:

PDF, 213 KB

english, 1992

19

Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates

Polyakov, Alexander Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Pearton, Stephen J., Ren, Fan, Lui, Lu, Johnson, J. Wayne, Kargin, N. I., Ryzhuk, R. V.

Journal:

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures

Année:

2013

Langue:

english

Fichier:

PDF, 764 KB

english, 2013

20

Electrical and structural properties of AlN/GaN and AlGaN/GaN heterojunctions

Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Yugova, T. G., Dabiran, A. M., Wowchak, A. M., Cui, B., Osinsky, A. V., Chow, P. P., Pearton, S. J., Scherbatchev, K. D., Bublik, V. T.

Journal:

Journal of Applied Physics

Année:

2008

Langue:

english

Fichier:

PDF, 774 KB

english, 2008

21

Improved GaN films with low background doping and low deep trap density grown by hydride vapor phase epitaxy

Polyakov, Alexander, Smirnov, Nikolai, Govorkov, Anatoli, Kozhukhova, Elena, Yugova, Tatiana, Usikov, Alexander, Helava, Heikki, Makarov, Yuri

Journal:

Physica status solidi

Année:

2015

Langue:

english

Fichier:

PDF, 235 KB

english, 2015

22

10.1070/PU2007v050n05ABEH006386

L. Barkov, S. S. Gershtein, B. Govorkov, S. V. Ivanov, V. G. Kadyshevsky, V. M. Lobashev, A. A. Logunov, V. A. Matveev, V. F. Obraztsov, A. N. Sisakyan, A. Skrinsky, N. Tyurin

Année:

2007

Langue:

english

Fichier:

PDF, 126 KB

english, 2007

23

SPIE Proceedings [SPIE Microlithography '99 - Santa Clara, CA (Sunday 14 March 1999)] Emerging Lithographic Technologies III - Excimer laser for 157-nm lithography

Stamm, Uwe, Bragin, Igor, Govorkov, Sergei V., Kleinschmidt, Juergen, Paetzel, Rainer, Slobodtchikov, Evgueni V., Vogler, Klaus, Vofl, Frank, Basting, Dirk, Vladimirsky, Yuli

Année:

1999

Langue:

english

Fichier:

PDF, 1.08 MB

english, 1999

24

Description of the control system algorithm for the concurrent production of concentrates of MD1 and MD2 nanostructures in terms of providing thermal vortex enrichment

Gorovoy, V O, Kolosov, A D, Nebogin, S A, Govorkov, A S, Kononenko, R V

Journal:

Journal of Physics Conference Series

Année:

2020

Fichier:

PDF, 1.07 MB

2020

25

CALIBRATION OF THE EXTENDED QUADRIHEDRAL NaI(Tl) SPECTROMETER BY COSMIC MUONS

Baskov, V. A., Govorkov, B. B., Polyansky, V. V.

Journal:

Bulletin of the Lebedev Physics Institute

Année:

2020

Fichier:

PDF, 386 KB

2020

26

Effect of preliminary processing on the parameters of deformation curves and structure of slip lines of MgO crystals

N. R. Alybaeva, Dozent Dr. G. V. Berezhkova, Dozent Dr. V. G. Govorkov

Journal:

Crystal Research and Technology

Année:

1976

Langue:

english

Fichier:

PDF, 297 KB

english, 1976

27

On the possibility of formation of a stable hardened subsurface layer in α-Al2O3 crystals

Dozent Dr. V. G. Govorkov, Dozent Dr. G. V. Berezhokova, E. A. Stepantsov

Journal:

Crystal Research and Technology

Année:

1976

Langue:

english

Fichier:

PDF, 153 KB

english, 1976

28

Green-Volkov algebra in configuration space

Journal:

Annals of Physics

Année:

1969

Langue:

english

Fichier:

PDF, 1.13 MB

english, 1969

29

Experimental investigation of the thermochemical dissolution of leucosapphire single crystals

H.S. Bagdasarov, G.V. Berezhkova, V.G. Govorkov, A.E. Smirnov

Journal:

Journal of Crystal Growth

Année:

1974

Langue:

english

Fichier:

PDF, 680 KB

english, 1974

30

Femtosecond dynamics of laser-induced phase transition of the GaAs surface layer to a centrosymmetric phase

S.V. Govorkov, V.I. Emel'yanov, N.I. Koroteev, I.L. Shumay

Journal:

Journal of Luminescence

Année:

1992

Langue:

english

Fichier:

PDF, 494 KB

english, 1992

31

Electron beam with momenta up to 46 GeV/c at the serpukhov accelerator

S.S. Gershtein, A.V. Samoylov, Yu.M. Sapunov, A.M. Frolov, A.I. Alikhanyan, G.L. Bayatyan, G.S. Vartanyan, S.G. Knyazyan, A.T. Margaryan, A.S. Belousov, N.P. Budanov, B.B. Govorkov, E.V. Minarik, S.V.

Journal:

Nuclear Instruments and Methods

Année:

1973

Langue:

english

Fichier:

PDF, 489 KB

english, 1973

32

Photoproduction of neutral pions on hydrogen near the threshold

V.I. Goldansky, B.B. Govorkov, R.G. Vassilkov

Journal:

Nuclear Physics

Année:

1959

Langue:

english

Fichier:

PDF, 283 KB

english, 1959

33

Atomic hydrogen passivation of deep levels activity in AlxGa1−xAs multiquantum well structures

A.Y. Polyakov, A.V. Pakhomov, M.V. Tishkin, O.M. Borodina, A.V. Govorkov, B.M. Leiferov, E.M. Omeljanovsky

Journal:

Solid State Communications

Année:

1990

Langue:

english

Fichier:

PDF, 261 KB

english, 1990

34

Atomic hydrogen modification of polycrystalline silicon solar cells characteristics

A.V. Pakhomov, A.Y. Polyakov, E.V. Popova, O.M. Borodina, A.S. Bruk, A.V. Govorkov, E.M. Omeljanovsky, B. Topel, V. Mirica

Journal:

Solid State Communications

Année:

1990

Langue:

english

Fichier:

PDF, 306 KB

english, 1990

35

Band offsets in heterojunctions of InGaAsSb/AlGaAsSb

A.Y. Polyakov, A.G. Milnes, A.V. Govorkov, L.V. Druzhinina, I.V. Tunitskaya, N.B. Smirnov

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 383 KB

english, 1995

36

Effects of proton implantation and hydrogen plasma passivation on electrical properties of InGaAlP and InGaP

A.Y Polyakov, A.A Chelniy, A.V Govorkov, N.B Smirnov, A.G Milnes, S.J Pearton, R.G Wilson, A.A Balmashnov, A.N Aluev, A.V Markov

Journal:

Solid-State Electronics

Année:

1995

Langue:

english

Fichier:

PDF, 475 KB

english, 1995

37

Properties of MIS structures prepared on InGaAsSb quaternary solutions by anodic oxidation

A.Y. Polyakov, A.G. Milnes, N.B. Smirnov, E.A. Kozhukhova, L.V. Druzhinina, A.V. Govorkov, L.M. Dolginov, I.V. Tunitskaya

Journal:

Solid-State Electronics

Année:

1994

Langue:

english

Fichier:

PDF, 374 KB

english, 1994

38

IR absorption spectra of YBaCuO films

S.A. Govorkov, N.N. Gonchakova, V.A. Tulin

Journal:

Physics Letters A

Année:

1990

Langue:

english

Fichier:

PDF, 236 KB

english, 1990

39

Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe

A.Y. Polyakov, A.V. Govorkov, N.B. Smirnov, N.V. Pashkova, S.J. Pearton, K. Ip, R.M. Frazier, C.R. Abernathy, D.P. Norton, J.M. Zavada, R.G. Wilson

Journal:

Materials Science in Semiconductor Processing

Année:

2004

Langue:

english

Fichier:

PDF, 203 KB

english, 2004

40

The influence of sapphire substrate orientation on crystalline quality of GaN films grown by hydride vapor phase epitaxy

Anatolij Govorkov, Alexsandr Donskov, Lev Diakonov, Yulia Kozlova, Sergej Malahov, Alexsandr Markov, Mikhail Mezhennyi, Vladimir Pavlov, Alexsandr Polykov, Tatiana Yugova

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 311 KB

english, 2009

41

EBIC investigations of defect distribution in ELOG GaN films

E.B. Yakimov, P.S. Vergeles, A.V. Govorkov, A.Y. Polyakov, N.B. Smirnov, In-Hwan Lee, Cheul Ro Lee, S.J. Pearton

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 238 KB

english, 2009

42

Deep centers in bulk AlN and their relation to low-angle dislocation boundaries

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, T.G. Yugova, K.D. Scherbatchev, O.A. Avdeev, T.Yu. Chemekova, E.N. Mokhov, S.S. Nagalyuk, H. Helava, Yu.N. Makarov

Journal:

Physica B: Condensed Matter

Année:

2009

Langue:

english

Fichier:

PDF, 252 KB

english, 2009

43

The existence of antiparticles seems to forbid violations of statistics

Journal:

Physica A: Statistical Mechanics and its Applications

Année:

1994

Langue:

english

Fichier:

PDF, 873 KB

english, 1994

44

Determination of current and flux distribution in squares of thin-film high-temperature superconductors

P.D. Grant, M.W. Denhoff, W. Xing, P. Brown, S. Govorkov, J.C. Irwin, B. Heinrich, H. Zhou, A.A. Fife, A.R. Cragg

Journal:

Physica C: Superconductivity

Année:

1994

Langue:

english

Fichier:

PDF, 1.15 MB

english, 1994

45

Hydrogen passivation effects in quaternary solid solutions of InGaAsSb lattice matched to GaSb

A.Y. Polyakov, I.V. Tunitskaya, L.V. Druzhinina, A.V. Govorkov, N.B. Smirnov, E.A. Kozhukhova, O.M. Borodina, A.G. Milnes, Xiaolei Li, S.J. Pearton, A.A. Balmashnov

Journal:

Materials Science and Engineering: B

Année:

1994

Langue:

english

Fichier:

PDF, 422 KB

english, 1994

46

Ion implantation effects in GaSb

A.G. Milnes, Xiaolei Li, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, O.M. Borodina, I.V. Tunitskaya, E.A. Kozhukhova, A.G. Mil'vidskaya

Journal:

Materials Science and Engineering: B

Année:

1994

Langue:

english

Fichier:

PDF, 595 KB

english, 1994

47

The properties of heavily compensated high resistivity GaSb crystals

A.G. Milvidskaya, A.Y. Polyakov, G.P. Kolchina, A.G. Milnes, A.V. Govorkov, N.B. Smirnov, I.V. Tunitskaya

Journal:

Materials Science and Engineering: B

Année:

1994

Langue:

english

Fichier:

PDF, 385 KB

english, 1994

48

Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.A. Chelniy, A.G. Milnes, Xiaolei Li, B.M. Leiferov, A.N. Aluev

Journal:

Materials Science and Engineering: B

Année:

1996

Langue:

english

Fichier:

PDF, 273 KB

english, 1996

49

The influence of oxygen in phosphine on electrical properties of undoped InGaAlP layers grown by MOCVD

A.Y. Polyakov, A.A. Chelniy, N.B. Smirnov, A.V. Govorkov, A.G. Milnes, Xiaolei Li, A.N. Aluev, P.B. Orlov

Journal:

Materials Science and Engineering: B

Année:

1996

Langue:

english

Fichier:

PDF, 311 KB

english, 1996

50

Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth

A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Markov, E.B. Yakimov, P.S. Vergeles, H. Amano, T. Kawashima

Journal:

Journal of Crystal Growth

Année:

2009

Langue:

english

Fichier:

PDF, 313 KB

english, 2009